2SK2965 transistor equivalent, silicon n channel mos type field effect transistor.
or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-re.
Unit: mm
z Low drain−source ON-resistance : RDS (ON) = 0.15 Ω (typ.) z High forward transfer admittance : |Yfs| = 10 S.
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